APT100GT60JRDQ4

$23.13

Description：IGBT MOD 600V 148A 500W ISOTOP
Series：Thunderbolt IGBT®

SKU:9c17a058b1c2 Category: IGBT Modules Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 600V 148A 500W ISOTOP
Series：Thunderbolt IGBT®
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
Input：Standard
NTC Thermistor：No
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：ISOTOP
Supplier Device Package：ISOTOP®
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：148 A
Power - Max：500 W
Current - Collector Cutoff (Max)：50 µA
Input Capacitance (Cies) @ Vce：5.15 nF @ 25 V

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APT100GT60JRDQ4

Overview

The APT100GT60JRDQ4 is a single IGBT module from Microchip Technology, utilizing SiC technology and NPT medium frequency Combi architecture. It features a 1200 V collector-emitter maximum voltage (VCEO) and a continuous collector current of 100 A at 25°C. The device has a collector-emitter saturation voltage of 3.2 V and a power dissipation rating of 570 W. It operates within a temperature range of -55°C to +150°C and uses an ISOTOP-4 package.

Feature Summary

NPT medium frequency Combi architecture
SiC technology integration
ISOTOP-4 surface-mount packaging

Applications

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical characteristics and package variations. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before finalizing procurement specifications.

Selection Notes

Select this component for high-voltage applications requiring robust switching performance. Ensure thermal management designs accommodate the specified power dissipation limits. Verify that the system operating temperatures remain within the defined -55°C to +150°C junction range for reliable operation.

Part Context

This part belongs to Microchip's portfolio of high-voltage power discretes and modules. It represents the company's focus on combining silicon carbide technologies with traditional IGBT structures to enhance efficiency and switching capabilities in demanding power conversion environments.