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APT106N60B2C6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 106A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT106N60B2C6
- Description：MOSFET N-CH 600V 106A T-MAX
- Series：CoolMOS™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：35mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 3.4mA
- Gate Charge (Qg) (Max) @ Vgs：308 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8390 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：833W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT106N60B2C6
Single FETs, MOSFETs Overview
The APT106N60B2C6 is a silicon N-Channel enhancement mode MOSFET manufactured by Microchip Technology. It utilizes Superjunction technology and is housed in a TO-247 MAX (T-MAX-3) through-hole package. Key electrical parameters include a drain-source breakdown voltage of 600 V, a continuous drain current of 106 A, and a maximum on-resistance of 35 mOhms. The device features a gate threshold voltage of 3 V, a total gate charge of 308 nC, and a power dissipation rating of 833 W. Operating temperatures range from -55 C to +150 C.
Single FETs, MOSFETs Feature Summary
- Superjunction architecture for optimized switching performance
- High unclamped inductive switching capability
- Enhanced dv/dt ruggedness
Single FETs, MOSFETs Applications
- High-performance power systems
- Industrial motor drives
- Power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix B2C6 against official Microchip documentation to confirm exact binning or testing variations. Confirm RoHS compliance status via the manufacturer datasheet. Ensure the T-MAX-3 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling at 600 V ratings. The low on-resistance supports efficient thermal management in high-power designs. Verify that the gate drive circuitry can accommodate the specified 308 nC gate charge for optimal switching speed without excessive losses.
Single FETs, MOSFETs Part Context
This part belongs to the APT series of Superjunction MOSFETs from Microchip Technology. These devices are engineered for high-efficiency power conversion. The TO-247 MAX package provides robust mechanical stability and superior heat dissipation compared to standard TO-247 packages, suitable for demanding industrial environments.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Microchip APT series parts sharing the 600V/106A specification. Verify pinout compatibility and thermal resistance values when substituting with equivalent components from other manufacturers.
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