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APT10M07JVR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 100V 225A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10M07JVR
- Description：MOSFET N-CH 100V 225A ISOTOP
- Series：POWER MOS V®
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：1050 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：21600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：700W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT10M07JVR
Single FETs, MOSFETs Overview
The APT10M07JVR is a high-voltage N-channel enhancement mode power MOSFET from the Power MOS V® series, manufactured by Microsemi Corporation. It utilizes advanced technology to minimize the JFET effect and reduce on-resistance while achieving faster switching speeds through an optimized gate layout. The device features a SOT-227 (ISOTOP®) package designed for base mounting applications. Key electrical characteristics include a drain-source breakdown voltage of 100V, a continuous drain current of 225A at 25°C case temperature, and a maximum on-state resistance of 0.007Ω at VGS=10V. It supports a pulsed drain current of 900A and operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Power MOS V® technology minimizes the JFET effect and reduces on-resistance for improved efficiency.
- Optimized gate layout enables faster switching speeds compared to previous generations.
- 100% avalanche tested for enhanced reliability under transient conditions.
- SOT-227 ISOTOP® package provides robust base mounting with low thermal impedance.
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- Motor control inverters
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify component authenticity against official Microsemi documentation due to potential counterfeits. Confirm that the ordering suffix matches the exact specifications required, as variations may exist. Ensure handling procedures account for electrostatic discharge sensitivity. Check for RoHS compliance status if environmental regulations apply to the specific manufacturing batch or revision.
Single FETs, MOSFETs Selection Notes
Select this component when a low on-resistance and high current capability are required in a base-mountable package. The 100V rating suits low-voltage high-current applications. Consider the thermal impedance and safe operating area curves for heat sink design. Verify gate charge requirements against the driver circuit capabilities to ensure adequate switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS V® family of high-voltage N-channel enhancement mode power MOSFETs produced by Microsemi. The series is characterized by reduced on-resistance and faster switching speeds achieved through optimized gate layouts. The ISOTOP® package variant offers a popular form factor for industrial and commercial power electronics requiring reliable base mounting.
Single FETs, MOSFETs Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
Single FETs, MOSFETs FAQ
What is the maximum repetitive avalanche energy for the APT10M07JVR?
The single pulse avalanche energy is rated at 3600 mJ, starting at a junction temperature of +25°C with an inductance of 142μH and a gate resistance of 25Ω.
How does the Power MOS V® technology improve performance?
It minimizes the JFET effect, increases packing density, reduces on-resistance, and achieves faster switching speeds through an optimized gate layout.
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