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APT10M09LVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 100V 100A TO264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10M09LVFRG
- Description：MOSFET N-CH 100V 100A TO264
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：350 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：9875 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264 [L]
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT10M09LVFRG
Single FETs, MOSFETs Overview
The APT10M09LVFRG is a Power MOS V® N-Channel enhancement mode power MOSFET in the TO-264 package. It features a drain-source breakdown voltage of 100V and a continuous drain current of 100A at 25°C case temperature. The maximum on-state resistance is 0.009Ω at VGS=10V and ID=50A. Total power dissipation reaches 625W at 25°C, with an operating junction temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Power MOS V® technology minimizes JFET effect and reduces on-resistance
- Optimized gate layout enables faster switching speeds
- Fast recovery body diode for efficient commutation
- Rated for repetitive and non-repetitive avalanche energy
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Motor control circuits
- Synchronous rectification applications
- Low-voltage power supply designs
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix LVFR against the manufacturer's official documentation to confirm pinout compatibility and thermal characteristics. Ensure that the procurement specifications align with the required voltage and current ratings for the intended application environment.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current applications requiring fast switching performance. Consider the thermal impedance characteristics and the need for adequate heatsinking to maintain junction temperatures within the specified operational limits during continuous conduction.
Single FETs, MOSFETs Part Context
This device belongs to the Advanced Power Technology (APT) Power MOS V® family, now part of Microchip Technology. The series focuses on reducing on-resistance through optimized packing density while maintaining robust avalanche capabilities suitable for demanding power electronics environments.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative devices offering similar 100V ratings and comparable RDS(on) values. Verify package dimensions and thermal resistance parameters to ensure mechanical and electrical compatibility before substitution.
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