APT10M11LVRG

$33.87

Description：MOSFET N-CH 100V 100A TO264
Series：POWER MOS V®
Mfr：Microchip Technology
Package：Tube

SKU:3b6a8a18b9c1 Category: Single FETs, MOSFETs Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT10M11LVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 100V 100A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT10M11LVRG

Description：MOSFET N-CH 100V 100A TO264
Series：POWER MOS V®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：450 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：10300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-264 (L)
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT10M11LVRG

APT10M11LVRG

Single FETs, MOSFETs Overview

The APT10M11LVRG is a single N-channel enhancement mode power MOSFET from the POWER MOS V series, manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-264-3 through-hole package. The device features a drain-source breakdown voltage of 100V and supports a continuous drain current of 100A at 25°C case temperature. Its maximum on-state resistance is 0.011 ohms at a gate-source voltage of 10V. The component operates within a junction temperature range of -55°C to +150°C with a total power dissipation rating of 520W.

Single FETs, MOSFETs Feature Summary

POWER MOS V technology minimizes JFET effects and reduces on-resistance for improved efficiency.
Optimized gate layout enables faster switching speeds compared to previous generations.
100% avalanche tested to ensure reliability under transient energy conditions.

Single FETs, MOSFETs Applications

High-frequency DC-DC converters
Motor control circuits
Power factor correction systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact electrical tolerances and packaging variations. Ensure that the procurement channel provides valid traceability for the TO-264 package type. Confirm RoHS compliance status directly from the manufacturer's datasheet before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with low on-resistance is required for high-current applications. The TO-264 package facilitates efficient thermal management via screw mounting or direct heatsink attachment. Consider the 100V rating and 100A current capacity to ensure adequate headroom for the intended circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the POWER MOS V family, which represents a generation of high-voltage N-channel enhancement mode power MOSFETs. The series focuses on reducing on-resistance through increased packing density and optimized gate layouts. The APT10M11LVR variant specifically targets applications requiring reliable performance in the 100V voltage class.