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Product Detailed Parameters
- Description：IGBT PT 600V 41A TO-247-3
- Series：POWER MOS 7®
- Mfr：Microsemi Corporation
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：41 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 11A
- Power - Max：187 W
- Switching Energy：46µJ (on), 90µJ (off)
- Input Type：Standard
- Gate Charge：40 nC
- Td (on/off) @ 25°C：7ns/29ns
- Test Condition：400V, 11A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The APT11GP60BDQB is a Power MOS 7 IGBT utilizing Punch Through technology, designed for high-frequency switching applications. It features a TO-247 package with a collector-emitter breakdown voltage of 600V and a continuous collector current of 41A at 25°C case temperature. The device exhibits a maximum on-state voltage of 2.7V at 15V gate drive and 11A collector current. Dynamic characteristics include a total gate charge of 7.5nC and turn-off energy of 90µJ under standard test conditions (400V, 11A, 5Ω). It incorporates an integrated ultrafast soft recovery anti-parallel diode rated for 14A average forward current.
Feature Summary
- Optimized for high-frequency switchmode power supplies using advanced Punch Through technology
- Integrated ultrafast soft recovery anti-parallel diode for efficient commutation
- Low conduction loss and low gate charge design for improved thermal performance
- Switching Safe Operating Area (SSOA) rated for robust operation
Applications
- High frequency switchmode power supplies
- High voltage inverter circuits
- Motor control drives
Procurement Notes
Verify the component against official Microsemi or Advanced Power Technology datasheets to confirm specifications. Ensure the TO-247 package matches the required footprint. Check for electrostatic discharge handling requirements during storage and assembly. Confirm availability as this specific part number may be subject to discontinuation notices.
Selection Notes
Select this component when a 600V rating and approximately 41A continuous current capability are required in a TO-247 form factor. Consider the 2.7V Vce(on) for conduction loss calculations at 11A. Evaluate the 90µJ turn-off energy for switching loss estimation in hard-switching topologies. Ensure the gate drive voltage supports the 15V specification for optimal performance.
Part Context
This device belongs to the POWER MOS 7 family of IGBTs from Advanced Power Technology, now part of Microsemi Corporation. The series is characterized by optimized trade-offs between conduction and switching losses. The APT11GP60BDQB specifically integrates a complementary diode, distinguishing it from single IGBT variants within the same voltage and current class.
Replacement Considerations
Cross-reference with other 600V TO-247 IGBTs featuring integrated diodes. Verify pinout compatibility and thermal resistance values before substitution.
