APT11N80KC3G

Description：MOSFET N-CH 800V 11A TO220
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tube

SKU:e1b445514a45 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT11N80KC3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 800V 11A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT11N80KC3G

Description：MOSFET N-CH 800V 11A TO220
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id：3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1585 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220 [K]
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for APT11N80KC3G

APT11N80KC3G

Single FETs, MOSFETs Overview

The APT11N80KC3G is an N-Channel Super Junction MOSFET manufactured by Microsemi Corporation. It features a breakdown voltage of 800 V and a continuous drain current of 11 A at case temperature. The device is designed for through-hole mounting in a TO-220 package, offering a power dissipation rating of 156 W under specified thermal conditions.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary Super Junction technology to enhance switching efficiency and reduce conduction losses compared to conventional planar structures.

Single FETs, MOSFETs Applications

High-voltage power supply circuits
Industrial motor control systems
Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or official Microchip channels, as the part is obsolete. Confirm that substitute components meet all electrical specifications and thermal requirements. Ensure proper handling procedures are followed due to the sensitivity of semiconductor devices to electrostatic discharge during installation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability with moderate current ratings. Consider the TO-220 package constraints for thermal management and PCB layout. Evaluate the need for Super Junction performance benefits over standard MOSFETs based on specific efficiency targets and operating frequency requirements.

Single FETs, MOSFETs Part Context

This device belongs to Microsemi's portfolio of discrete power semiconductors, now integrated into Microchip Technology Inc. following acquisition. It represents the company's focus on robust power solutions for industrial and commercial markets, leveraging advanced silicon processing techniques for improved reliability and performance in demanding environments.