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APT1201R5BVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 10A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT1201R5BVFRG
- Description：MOSFET N-CH 1200V 10A TO247
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：285 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：4440 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT1201R5BVFRG
Single FETs, MOSFETs Overview
The APT1201R5BVFRG is an N-Channel Power MOSFET manufactured by Microchip Technology, housed in a TO-247 [B] through-hole package. It features a maximum drain-source voltage (Vds) of 1200 V and a continuous drain current (Id) of 10 A at case temperature. The device has a maximum on-state resistance (Rds(on)) of 1500 mΩ. It is classified as a FREDFET MOS type, indicating specific fast recovery characteristics suitable for high-voltage switching applications.
Single FETs, MOSFETs Feature Summary
- High voltage capability with 1200 V drain-source breakdown rating
- Through-hole mounting in a robust TO-247 [B] package
- N-Channel enhancement mode operation
- FREDFET MOS technology for optimized switching performance
Single FETs, MOSFETs Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Inverter topologies requiring high blocking voltage
Single FETs, MOSFETs Procurement Notes
Verify the exact suffix 'VFRG' against the manufacturer's official datasheet to confirm pinout and thermal specifications. Ensure the TO-247 [B] package dimensions match your PCB footprint requirements. Cross-reference the 1500 mΩ Rds(on) max value with your thermal management calculations to ensure safe operating area compliance under expected load conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a 1200 V rating is mandatory and through-hole assembly is preferred over surface mount alternatives. The 10 A continuous current limit requires careful thermal design due to the relatively high on-resistance compared to lower voltage devices. Consider the FREDFET characteristic if reverse recovery behavior is critical for the specific circuit topology.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's discrete power transistor portfolio, specifically within the MOSFET category. It utilizes silicon technology and is designed for general-purpose high-voltage switching. The TO-247 [B] package provides a balance of electrical isolation and heat dissipation for medium-power industrial applications.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any legacy designs using generic 1200 V TO-247 MOSFETs by checking pinout alignment and absolute maximum ratings.
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