APT1204R7BFLLG

$9.07

Description：MOSFET N-CH 1200V 3.5A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:4a3624f17a01 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1204R7BFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 3.5A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1204R7BFLLG

Description：MOSFET N-CH 1200V 3.5A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：715 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1204R7BFLLG

APT1204R7BFLLG

Single FETs, MOSFETs Overview

APT1204R7BFLLG is a high-voltage, ultra-fast, low gate charge N-channel MOSFET from Microchip Technology. It features a 1200V breakdown voltage and a maximum on-resistance of 4.7 ohms. The device is available in TO-247 or D3PAK packages.

Single FETs, MOSFETs Feature Summary

Ultra-fast switching capability with industry-low gate charge for reduced switching losses
Proprietary self-aligned aluminum metal gate structure enabling fast signal propagation
Internal series gate resistance lower than competitive polysilicon gate devices

Single FETs, MOSFETs Applications

Class D amplifiers up to 2 MHz
High-voltage pulsed DC applications
AM transmitters
Plasma deposition and etching systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-247 or D3PAK) required for your design, as indicated by the suffix in the part number. Confirm that the 4.7 ohm on-resistance aligns with your current handling requirements. Ensure compatibility with the specified 2 MHz operating frequency range for Class D amplifier designs.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-frequency circuits requiring minimal switching loss and fast signal propagation. The internal series gate resistance supports uniform signal distribution. Verify thermal management capabilities for the chosen package style under continuous operation conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Ultra-Fast, Low Gate Charge MOSFET family. These components are engineered for high-frequency and pulsed high-voltage applications. They utilize a proprietary self-aligned aluminum metal gate structure to achieve extremely fast switching speeds and very low switching losses compared to standard silicon MOSFETs.