APT12067B2LLG

Single FETs, MOSFETs Overview

The APT12067B2LLG is an N-Channel Power MOSFET manufactured by Microsemi Corporation, housed in a TO-247-3 package. It features a drain-to-source voltage (Vdss) rating of 1200 V and a continuous drain current (Id) of 18 A. The device exhibits a maximum on-resistance (Rds(on)) of 670 mΩ at 9 A with a gate drive of 10 V. Key electrical characteristics include a gate charge (Qg) of 150 nC measured at 10 V, an input capacitance (Ciss) of 4420 pF at 25 V, and a gate-to-source voltage (Vgs) limit of ±30 V.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 1200 V breakdown rating for robust operation in demanding power environments.
• Low conduction losses achieved through optimized Rds(on) characteristics under standard gate drive conditions.
• Integrated thermal management design within the TO-247-3 package to support high-current applications.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Induction heating systems
• Motor control inverters

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as Microsemi's semiconductor assets were acquired by Microchip Technology. Ensure the component matches the specific suffix 'LLG' and TO-247-3 package configuration. Confirm authenticity through authorized distribution channels to avoid counterfeit parts, especially given the legacy status of certain Microsemi product lines.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rating is required alongside moderate current handling up to 18 A. The 670 mΩ Rds(on) offers a balance between conduction loss and switching performance. Consider the 150 nC gate charge for driver capability requirements. This part is suitable for designs prioritizing high voltage isolation over ultra-low switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of discrete power MOSFETs from Microsemi. These components are engineered for industrial power conversion applications requiring high reliability and voltage withstand capabilities. The TO-247-3 form factor provides a standardized mounting solution for heatsinking in medium-power electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 1200 V N-Channel MOSFETs in TO-247 packages with comparable Rds(on) and Qg values. Verify pinout compatibility and thermal resistance specifications before substitution. Cross-reference with Microchip or other major manufacturers offering equivalent high-voltage discrete FETs.