Single Bipolar Transistors APT13003DU-G1 product image

APT13003DU-G1

$0.09
  • Description:TRANS NPN 450V 1.5A TO-126
  • Series:-

SKU:566b7cd60c16 Category: Brand:

  
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APT13003DU-G1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 450V 1.5A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for APT13003DU-G1

  • Description:TRANS NPN 450V 1.5A TO-126
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):450 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 250mA, 1A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5 @ 1A, 2V
  • Power - Max:20 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for APT13003DU-G1

APT13003DU-G1

Single Bipolar Transistors Overview

The APT13003DU-G1 is a high-voltage NPN bipolar junction transistor manufactured by Diodes Incorporated. It belongs to the APT1300 series and utilizes silicon technology for robust performance. The component features a TO-92 package designed for through-hole mounting, suitable for compact circuit layouts. Key electrical ratings include a maximum collector-emitter voltage of 450V and a continuous collector current capacity of 1.5A. The device supports a maximum power dissipation of 1.1W and operates within a temperature range from -65°C to +150°C junction temperature.

Single Bipolar Transistors Feature Summary

  • High collector-emitter breakdown voltage capability for high-voltage switching applications
  • Low saturation voltage characteristics for improved efficiency
  • Robust thermal performance with extended operating temperature range

Single Bipolar Transistors Applications

  • Flyback converter designs in offline power supplies
  • Battery charger circuits for mobile devices
  • General-purpose high-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'DU' against official Diodes Incorporated documentation to confirm exact packaging configuration, as standard datasheets may list generic variants. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's latest environmental reports before integration into production.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation with moderate current handling in a small form factor. Ensure the thermal management strategy accommodates the 1.1W power dissipation limit in the TO-92 package. Verify that the required collector-emitter voltage rating exceeds the peak transient voltages present in the target application environment.

Single Bipolar Transistors Part Context

This part is part of the APT1300 series of high-voltage NPN transistors from Diodes Incorporated. The series is engineered for cost-effective solutions in consumer electronics and power management systems. The TO-92 package variant provides a balance between performance and board space efficiency for low-to-medium power applications.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent high-voltage NPN transistors in TO-92 packages. Verify pinout compatibility and electrical parameter margins before replacing.

APT13003DU-G1APT13003DU-G1
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