APT13003EZTR-G1

Single Bipolar Transistors Overview

The APT13003EZTR-G1 is a silicon NPN high-voltage bipolar junction transistor manufactured by Diodes Incorporated. It utilizes a TO-92-3 through-hole package configuration. The device features a collector-emitter voltage rating of 700V and a collector-base voltage of 450V. It supports a maximum DC collector current of 1.5A with a power dissipation capacity of 1.1W. The component operates within a temperature range up to +150°C and has a minimum operating frequency of 4MHz.

Single Bipolar Transistors Feature Summary

• High voltage capability for robust switching applications
• Through-hole mounting for standard PCB integration
• Single transistor configuration

Single Bipolar Transistors Applications

• High voltage switching circuits
• Power supply designs requiring high breakdown voltage
• General purpose amplification in high voltage environments

Single Bipolar Transistors Procurement Notes

Verify the specific suffix E1 or G1 against official Diodes Incorporated documentation, as availability and exact electrical tolerances may vary between manufacturing lots or revisions. Confirm end-of-life status directly with the manufacturer, as discontinuation notices impact long-term supply chain stability. Ensure the TO-92-3 package dimensions match your mechanical constraints before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a high collector-emitter voltage rating near 700V is required in a small through-hole package. Compare the 1.5A current limit and 1.1W power dissipation against circuit load requirements. Consider the thermal management needs associated with the TO-92-3 form factor at higher operating temperatures up to 150°C.

Single Bipolar Transistors Part Context

This part belongs to the APT13003 series of high-voltage NPN transistors from Diodes Incorporated. The series includes variants such as APT13003HZTR-G1 and APT13003HU-G1, which share similar core technologies but differ in packaging and specific voltage ratings. The EZTR-G1 variant specifically denotes the TO-92-3 through-hole configuration with tape-and-reel packaging.

Single Bipolar Transistors Replacement Considerations

APT13003HZTR-G1 shares the same manufacturer and general high-voltage NPN characteristics but may have different voltage ratings or packaging specifics. Verify datasheet parameters for Vceo and Vcbo compatibility before substitution.