APT13GP120BDQ1G

Overview

The APT13GP120BDQ1G is a Power MOS 7™ Punch-Through IGBT co-packaged with a DQ fast recovery epitaxial diode. It features a 1200 V collector-emitter breakdown voltage and a typical saturation voltage of 3.3 V at 25°C. The device supports a continuous collector current of 20 A at 110°C and up to 33 A at 25°C. Rated for switching frequencies up to 100 kHz, it utilizes a TO-247 package.

Feature Summary

• Power MOS 7™ Punch-Through technology optimized for ultra-low gate charge
• Co-packaged with high-speed DQ FRED for improved commutation ruggedness
• Designed for hard-switched applications requiring low switching losses

Applications

• High-frequency Switch Mode Power Supplies (SMPS)
• Induction heating systems
• Plasma cutting equipment

Procurement Notes

Verify the specific datasheet revision and electrical characteristics directly from Microchip Technology before finalizing designs. Confirm that the TO-247 package dimensions match the target PCB footprint and thermal management requirements. Ensure the gate drive circuitry aligns with the specified gate charge parameters for optimal switching performance.

Selection Notes

Select this component when designing circuits operating between 50 kHz and 100 kHz that require a balance of low conduction loss and fast switching speed. The co-packaged DQ diode eliminates the need for external anti-parallel diodes, simplifying the bill of materials. Verify thermal constraints based on the 20 A rating at elevated case temperatures.

Part Context

This part belongs to the Power MOS 7™ family, which utilizes Punch-Through (PT) technology. This series is engineered to provide an optimal combination of efficiency and cost for high-voltage power conversion applications, distinguishing it from the higher-speed NPT or lower-loss Field Stop families.

Replacement Considerations

APT25GP120BDQ1G offers similar packaging and technology with a higher current rating of 25 A.