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Product Detailed Parameters
- Description：IGBT PT 1200V 41A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：41 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 13A
- Power - Max：250 W
- Switching Energy：115µJ (on), 165µJ (off)
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：9ns/28ns
- Test Condition：600V, 13A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT13GP120BG is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes PT MOS 7 technology and is housed in a TO-247-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.3 V, a gate-emitter voltage range of -20 V to 20 V, and a power dissipation rating of 543 W. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Single IGBT configuration utilizing PT MOS 7 technology
- High voltage capability with 1200 V collector-emitter breakdown
- Robust thermal performance rated for up to 150°C junction temperature
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix 'BG' against official Microchip documentation to confirm exact binning or packaging variations. Confirm RoHS compliance status via the manufacturer datasheet before integration. Check for end-of-life notices as availability may be limited compared to standard variants.
Selection Notes
Select this component when a 1200 V, 35 A single IGBT in a TO-247-3 package is required. Ensure the drive circuit can handle the specified 20 V gate-emitter limits. Verify that the thermal management system can dissipate up to 543 W under worst-case operating conditions.
Part Context
This part belongs to the APT series of high-voltage power discretes from Microchip Technology. It is designed for general-purpose switching applications requiring reliable performance at high voltages. The TO-247-3 package provides a balance of current handling and ease of mounting for prototyping and production.
Replacement Considerations
Direct replacements must match the 1200 V rating, 35 A current capacity, and TO-247-3 footprint. Verify pinout compatibility and saturation voltage characteristics to ensure equivalent thermal and electrical performance in the existing design.
