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Product Detailed Parameters
- Description：IGBT PT 1200V 41A TO220
- Series：POWER MOS 7®
- Mfr：Microsemi Corporation
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：41 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 13A
- Power - Max：250 W
- Switching Energy：114µJ (on), 165µJ (off)
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：9ns/28ns
- Test Condition：600V, 13A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220 [K]
- Grade：-
- Qualification：-
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Overview
The APT13GP120KG is a single N-channel punch-through IGBT from the POWER MOS 7 series, manufactured by Microsemi Corporation. It features a TO-220 package with a maximum collector-emitter voltage of 1200V and a continuous collector current of 41A at 25°C case temperature. The device exhibits a typical on-state voltage of 3.3V at 13A and 15V gate drive. Key dynamic characteristics include a total gate charge of 55nC and turn-off energy of 165µJ under standard test conditions (600V, 13A). Designed for high-frequency applications, it supports operation up to 100kHz at 600V/10A.
Feature Summary
- Utilizes proprietary metal gate technology optimized for ultrafast tail current shutoff
- Provides low conduction loss and low gate charge for efficient switching
- Rated for Reverse Bias Safe Operating Area (RBSOA) at elevated temperatures
Applications
- High frequency switch-mode power supplies
- Tail current sensitive applications
- Inverter circuits requiring fast switching speeds
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision status as specifications may be subject to change without notice. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to device sensitivity.
Selection Notes
Select this component for designs requiring high voltage blocking capability combined with rapid turn-off characteristics. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive circuitry can supply the necessary plateau voltage and charge current to achieve optimal switching performance within the rated limits.
Part Context
This part belongs to the Advanced Power Technology (APT) POWER MOS 7 family, now integrated into Microchip's portfolio following acquisitions. The 'K' suffix typically denotes specific packaging variations within the TO-220 form factor. This generation of IGBTs was engineered to offer cost-effective alternatives to Power MOSFETs in high-voltage switching scenarios.
Replacement Considerations
Direct replacements must match the 1200V rating, TO-220 package, and punch-through technology. Verify that substitute devices meet or exceed the 41A continuous current and 50A pulsed current ratings. Check compatibility of gate threshold voltages and switching energies to ensure existing driver circuits function correctly without modification.
