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The APT15GP60BDQ1G is a single Power MOS 7® IGBT manufactured by Microchip Technology. It features a Planar Trench (PT) structure with a maximum collector-emitter voltage of 600 V and a continuous collector current of 56 A at 25°C. The device is housed in a TO-247 [B] through-hole package, rated for 250 W power dissipation. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix 'BDQ1G' against official Microchip documentation to confirm the exact pinout and thermal characteristics associated with the TO-247 [B] package variant. Ensure compatibility with existing PCB footprints and gate drive requirements before integration.
Select this component for designs requiring a 600 V rating with moderate current handling capabilities. The TO-247 package facilitates efficient heat dissipation for through-hole mounting. Consider the 56 A continuous current limit and 250 W power dissipation rating when designing thermal management solutions.
This part belongs to the APT15GP60 series of single IGBTs from Microchip Technology. It shares similar electrical specifications with variants like APT15GP60KG but differs in packaging, specifically utilizing the TO-247 form factor instead of TO-220.
APT15GP60KG
The maximum collector-emitter voltage (VCEO) is 600 V.
The continuous collector current (Ic) is 56 A at 25°C.