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Product Detailed Parameters
- Description：IGBT PT 600V 56A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：56 A
- Current - Collector Pulsed (Icm)：65 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 15A
- Power - Max：250 W
- Switching Energy：130µJ (on), 121µJ (off)
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：8ns/29ns
- Test Condition：400V, 15A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT15GP60BG is a single Insulated Gate Bipolar Transistor (IGBT) from Microchip Technology, utilizing Power MOS 7 technology with a Planar Trench Field-Stop (PT) structure. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25°C. The device is housed in a TO-247 package for through-hole mounting. Key electrical characteristics include a saturation voltage of 2.2 V at 15 A and a gate charge of 55 nC. Switching energies are specified as 130 µJ for turn-on and 121 µJ for turn-off under standard test conditions. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Power MOS 7 technology provides low conduction loss and optimized switching performance.
- Planar Trench Field-Stop (PT) structure ensures robust short-circuit capability and high thermal stability.
- Standard input type allows for compatibility with common gate drive circuits.
Applications
- Motor drives and servo amplifiers
- Switched-mode power supplies (SMPS)
- Inverter circuits for renewable energy systems
Procurement Notes
Verify the specific suffix 'BG' against the manufacturer's official datasheet to confirm package details and compliance status. Check for Product Change Notifications (PCNs) regarding manufacturing site or material changes. Confirm availability status as distribution data may vary. Ensure the source document explicitly lists this part number to avoid substitution errors.
Selection Notes
Select this component for applications requiring a 600 V rated single IGBT with moderate current handling. Compare the 2.2 V saturation voltage and 55 nC gate charge against alternative devices to ensure compatibility with existing gate driver capabilities. Verify that the TO-247 package fits the thermal management design constraints of the target system.
Part Context
This part belongs to the APT series of discrete IGBTs manufactured by Microchip Technology. It is related to other variants such as APT15GP60KG and APT30GP60BG, which share similar electrical ratings but differ in packaging or current specifications. The series utilizes Power MOS 7 technology for improved efficiency in power conversion applications.
Replacement Considerations
Direct substitutes must match the 600 V rating, 15 A current, and TO-247 package. Verify pinout compatibility and thermal resistance values. Cross-reference with Microchip's official replacement guide for discontinued or updated parts.
