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Product Detailed Parameters
- Description：IGBT NPT 1200V 36A TO247
- Series：Thunderbolt IGBT®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：36 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 15A
- Power - Max：250 W
- Switching Energy：585µJ (on), 260µJ (off)
- Input Type：Standard
- Gate Charge：105 nC
- Td (on/off) @ 25°C：10ns/85ns
- Test Condition：800V, 15A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT15GT120BRDQ1G is a single IGBT transistor manufactured by Microchip Technology, designed for high-voltage power switching applications. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 42 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 2.3 V. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation (Pd) of 260 W. The component utilizes a TO-247 package with through-hole mounting and supports a gate-emitter voltage range of ±20 V.
Feature Summary
- High voltage capability suitable for industrial motor drives and inverters
- Robust thermal performance with extended operating temperature range
- Low saturation voltage for improved efficiency in power conversion
Applications
- Industrial motor control systems
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific suffix 'DQ1G' against official Microchip documentation to confirm automotive qualification status and RoHS compliance details. Ensure the ordering information matches the exact datasheet revision for the TO-247 package variant. Cross-reference the manufacturer part number directly with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a 1200 V rating is required for high-power single-switch applications. Compare the 42 A continuous current and 2.3 V saturation voltage against system requirements. Consider the TO-247 package for through-hole assembly needs. Evaluate thermal management solutions given the 260 W power dissipation limit and 150°C maximum junction temperature specification.
Part Context
This IGBT belongs to Microchip's discrete transistor lineup, distinct from their module offerings like the APTGT series. It serves as a standalone switching element rather than an integrated power module. The TO-247 form factor provides a balance between current handling capacity and board space efficiency for individual switch implementations in medium-power circuits.
