APT200GN60B2G

Overview

The APT200GN60B2G is a single IGBT module from the Field Stop series, manufactured by Microchip Technology. It features a T-MAX package style and operates with a maximum collector-emitter voltage of 600 V. The device has a typical saturation voltage of 1.5 V at 25°C and supports a continuous collector current of 230 A at 25°C. It is designed for switching frequencies up to 30 kHz in hard-switched applications.

Feature Summary

• Field stop trench technology providing low conduction loss
• Short circuit rated capability
• Easy paralleling design

Applications

• High-power industrial motor drives
• Medium-frequency power conversion systems
• Inverter circuits requiring robust short-circuit performance

Procurement Notes

Verify the specific revision level and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the T-MAX package dimensions match the target PCB footprint and thermal interface requirements. Ensure gate drive parameters are compatible with the specified voltage ratings.

Selection Notes

Select this component when low conduction loss and high current density are required in the 600 V class. The Field Stop architecture offers superior efficiency compared to NPT technologies at similar current levels. Consider the T-MAX package for its thermal performance and mechanical robustness in high-power modules.

Part Context

This part belongs to the Field Stop IGBT family, which utilizes trench gate technology to minimize on-state voltage drop. It is distinct from the Power MOS 7 and Power MOS 8 series, offering a balance between switching speed and conduction efficiency suitable for medium-frequency applications.

Replacement Considerations

Direct replacements within the same family include APT200GN60J (SOT-227 package) for lower current density needs, or APT150GN60B2G for reduced current requirements. Cross-package substitution requires careful evaluation of thermal resistance and pinout compatibility.