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Product Detailed Parameters
- Description：IGBT NPT 1200V 32A TO247
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：32 A
- Current - Collector Pulsed (Icm)：64 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 15A
- Power - Max：200 W
- Switching Energy：2.7mJ
- Input Type：Standard
- Gate Charge：95 nC
- Td (on/off) @ 25°C：17ns/105ns
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT20GF120BR is a 1200V, 32A Fast IGBT manufactured by Microsemi Corporation. It utilizes Non-Punch Through technology for superior ruggedness and low collector-emitter on-voltage. The device features avalanche rating and is housed in a TO-247 package. Key electrical parameters include a maximum collector-emitter breakdown voltage of 1200V, a gate threshold voltage ranging from 4.5V to 6.5V, and a typical total gate charge of 95nC at VGE=15V. Thermal characteristics specify a junction-to-case thermal resistance of 0.63°C/W and an operating junction temperature range of -55°C to 150°C.
Feature Summary
- Non-Punch Through technology providing fast switching speed and low tail current
- Avalanche rated with RBSOA and SCSOA capability for enhanced ruggedness
- Low forward voltage drop and ultra-low leakage current characteristics
Applications
- High frequency switching applications up to 20KHz
- Inductive load driving circuits requiring clamped inductive switching
- Power conversion systems utilizing resistive or inductive switching topologies
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact mechanical and electrical specifications. Confirm component availability status as distribution listings may indicate obsolete or discontinued stock levels. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to device sensitivity.
Selection Notes
Select this component based on the required 1200V blocking voltage and 32A continuous collector current at 25°C case temperature. Evaluate the thermal management requirements using the specified junction-to-case thermal resistance of 0.63°C/W. Consider the gate drive voltage compatibility with the 15V standard and the switching energy losses depicted in the typical performance curves for the target operating frequency.
Part Context
This part belongs to the Fast IGBT series developed by Advanced Power Technology (APT), now part of Microsemi. The series emphasizes high voltage power switching capabilities using Non-Punch Through technology. The TO-247 package provides a robust mounting solution for industrial power electronics applications requiring high reliability and thermal performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' devices.
