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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A D3PAK
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：136 W
- Switching Energy：230µJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：9ns/140ns
- Test Condition：400V, 20A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：D3PAK
- Grade：-
- Qualification：-
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Overview
The APT20GN60SDQ2G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Fieldstop Low Frequency Combi technology and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 40 A at 25°C and handles a power dissipation of 136 W. It features a gate-emitter voltage range of -20 V to +20 V and a leakage current of 300 nA. Packaged in a D3PAK-3 (TO-268) surface-mount format, it functions within an operating temperature range of -55°C to +175°C.
Feature Summary
- Fieldstop Low Frequency Combi architecture for optimized switching performance
- High thermal stability supporting operation up to 175°C junction temperature
- Surface-mount D3PAK-3 package design for automated assembly
Applications
- Low frequency power conversion circuits
- Industrial motor drive systems
- General purpose switching applications requiring 600V isolation
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's environmental declaration. Cross-reference the Mouser part number 494-APT20GN60SDQ2G with the original datasheet to validate pinout compatibility before integration into existing designs.
Selection Notes
Select this component when a single IGBT with 600V blocking capability and 40A continuous current rating is required for surface-mount implementations. The TO-268 package suits applications needing moderate power density without through-hole constraints. Ensure the driving circuit can supply the necessary gate charge within the specified voltage limits to maintain optimal switching characteristics.
Part Context
This device belongs to the Microchip APT series of discrete IGBTs, specifically designed for low-frequency applications. It represents a transition from legacy International Rectifier products now managed under the Microchip portfolio. The part integrates advanced Fieldstop technology to reduce conduction losses compared to standard trench IGBTs in similar voltage classes.
Replacement Considerations
Direct replacements require matching the 600V/40A rating and D3PAK-3 footprint. Verify that alternative suppliers offer equivalent saturation voltage and thermal resistance characteristics to ensure system reliability remains unchanged during substitution.
