APT20M20LFLLG

Single FETs, MOSFETs Overview

The APT20M20LFLLG is a single N-channel Power MOSFET manufactured by Microchip Technology. It utilizes silicon technology and features a T-MAX-3 (TO-247 MAX) through-hole package. Key electrical parameters include a drain-source breakdown voltage of 200 V, a continuous drain current of 100 A, and a maximum on-resistance of 20 mΩ. The device supports a gate-source voltage range of ±30 V with a typical threshold voltage of 3 V. Gate charge is specified at 110 nC. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 568 W.

Single FETs, MOSFETs Feature Summary

• High-current capability with 100 A continuous drain current rating
• Low conduction losses via optimized 20 mΩ on-resistance
• Robust thermal management in T-MAX-3 through-hole package
• Enhanced mode operation for standard drive compatibility

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power supply inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LF' against official Microchip documentation to confirm lead-free status and RoHS compliance details. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Confirm that the 20 mΩ Rds(on) specification aligns with your thermal design calculations under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V rating and high current handling are required in a through-hole form factor. Compare the 20 mΩ on-resistance against alternative packages like TO-264 if space constraints allow. Consider the 110 nC gate charge for driver selection to ensure adequate switching speed without excessive drive current requirements.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of Fast Recovery Epitaxial Diode (FREDFET) MOSFETs from Microchip. These devices are designed for high-efficiency power switching applications. The T-MAX-3 package provides superior thermal performance compared to traditional TO-247 packages, allowing for higher power density in compact designs.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains the same or lower Rds(on) and compatible gate charge characteristics to avoid redesigning the gate drive circuitry.