APT20M45BVFRG

Single FETs, MOSFETs Overview

The APT20M45BVRG is a single N-channel Power MOSFET manufactured by Microchip Technology, housed in a TO-247-3 through-hole package. It features a 200 V drain-source breakdown voltage and a maximum continuous drain current of 56 A at case temperature. The device exhibits a low on-resistance of 45 mΩ at Vgs = 10 V, with a gate threshold voltage of 4 V. Key switching parameters include a total gate charge of 130 nC, turn-on delay of 12 ns, and fall time of 7 ns. It supports a power dissipation of 300 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon technology for robust high-voltage switching performance
• Features low on-resistance to minimize conduction losses
• Designed for enhanced mode operation with fast switching characteristics

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against the manufacturer's official datasheet to confirm RoHS compliance status and lead time requirements. Ensure the ordering quantity aligns with the tube packaging configuration specified in the product documentation. Cross-reference the part number with the latest Microchip Technology release notes to validate any recent design changes or obsolescence notices before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole N-channel MOSFET with 200 V rating and moderate current handling is required. Compare the 45 mΩ on-resistance and 130 nC gate charge against alternative packages like TO-268 if surface mount solutions are preferred. Evaluate thermal management needs based on the 300 W power dissipation capability and TO-247-3 package thermal resistance for the specific application environment.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of Power MOSFETs from Microchip Technology, designed for general-purpose power switching applications. The TO-247-3 package provides a balance between electrical performance and mechanical mounting flexibility for through-hole PCB assembly. It serves as a discrete solution for medium-power electronics requiring reliable high-voltage isolation and efficient current control.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 200 V N-channel MOSFETs in TO-247 packages with comparable Rds(on) and Id ratings, such as variants from the same family with different on-resistance values. Verify pinout compatibility and thermal characteristics before substitution.