APT20M45BVRG

$9.15

Description：MOSFET N-CH 200V 56A TO247
Series：POWER MOS V®
Mfr：Microchip Technology
Package：Tube

SKU:706794d66e20 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT20M45BVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 200V 56A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT20M45BVRG

Description：MOSFET N-CH 200V 56A TO247
Series：POWER MOS V®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：45mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4860 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT20M45BVRG

APT20M45BVRG

Single FETs, MOSFETs Overview

The APT20M45BVRG is a Power MOS V® N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It features a TO-247 package with a drain-source voltage of 200V and a continuous drain current of 56A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.045Ω at VGS=10V. Total gate charge is typically 130nC, supporting faster switching speeds through optimized gate layout. It operates within a junction temperature range of -55°C to +150°C and includes avalanche energy ratings.

Single FETs, MOSFETs Feature Summary

Optimized gate layout enables faster switching speeds compared to previous generations
Minimizes JFET effect to increase packing density and reduce on-resistance
100% avalanche tested for enhanced reliability under inductive load switching

Single FETs, MOSFETs Applications

High frequency DC-DC converters
Motor control applications
Power factor correction circuits

Single FETs, MOSFETs Procurement Notes

Verify the component origin as Microchip Technology or its predecessor Microsemi. Confirm the specific ordering suffix matches the required package variant. Ensure compliance with RoHS standards as indicated in the datasheet specifications. Check for electrostatic discharge sensitivity during handling procedures.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses at 200V blocking capability. Consider the thermal resistance characteristics for heatsink sizing in high-power environments. Evaluate the gate charge requirements against available driver capabilities to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS V® family of high-voltage N-Channel enhancement mode MOSFETs. The series focuses on minimizing the JFET effect and reducing on-resistance through advanced process technology. It utilizes the popular TO-247 through-hole package for robust mechanical mounting.