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APT20N60BC3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 20.7A TO247-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT20N60BC3G
- Description：MOSFET N-CH 600V 20.7A TO247-3
- Series：CoolMOS™
- Mfr：Microsemi Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 13.1A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2440 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT20N60BC3G
Single FETs, MOSFETs Overview
The APT20N60BC3G is a Super Junction MOSFET manufactured by Microsemi Corporation, housed in a TO-247 package. It features a Drain-Source Breakdown Voltage (VDSS) of 600V and a Continuous Drain Current (ID) of 20.7A at TC = 25°C. The maximum Drain-Source On-State Resistance (RDS(on)) is 0.19Ω at VGS = 10V and ID = 13.1A. Total Gate Charge (Qg) is typically 90nC at VGS = 10V. The device supports a Pulsed Drain Current (IDM) of 62A and has a Total Power Dissipation (PD) of 208W at TC = 25°C.
Single FETs, MOSFETs Feature Summary
- Utilizes Super Junction technology to achieve ultra-low on-state resistance and low Miller capacitance.
- Features ultra-low gate charge for efficient switching performance.
- Rated for repetitive avalanche energy to withstand high-energy stress conditions.
Single FETs, MOSFETs Applications
- High-frequency power conversion circuits
- Resonant converter topologies
- Motor drive systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation as Microsemi Corporation or Advanced Power Technology (APT), noting historical corporate transitions. Confirm the specific ordering suffix 'C3' aligns with the required RoHS compliance and lead-free specifications documented in the datasheet revision D. Ensure the component matches the TO-247 physical outline dimensions provided.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage blocking capability combined with low conduction losses. The Super Junction architecture offers superior performance compared to standard planar MOSFETs. Evaluate thermal management requirements based on the junction-to-case thermal resistance and ensure the operating temperature remains within the specified -55°C to +150°C range.
Single FETs, MOSFETs Part Context
This part belongs to the APT20N60xC3G series, which includes variants such as APT20N60SC3. The 'B' designation indicates the specific die configuration within the TO-247 package family. The product line focuses on high-voltage power switching solutions utilizing advanced silicon technologies for improved efficiency.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other 600V Super Junction MOSFETs with comparable RDS(on) and Qg values. Verify pinout compatibility and thermal characteristics when considering alternatives from different manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
