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Product Detailed Parameters
- Description：IGBT PT 1200V 69A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：69 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 25A
- Power - Max：417 W
- Switching Energy：500µJ (on), 440µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：12ns/70ns
- Test Condition：600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT25GP120BDQ1G is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and belongs to the POWER MOS 7 family, featuring PT MOS 7 Combi architecture with an integrated SiC diode. The device is housed in a TO-247-3 package for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 69 A at 25°C. The saturation voltage is 3.3 V, with a power dissipation rating of 417 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a Silicon Carbide (SiC) diode for improved switching performance.
- Utilizes POWER MOS 7 technology for optimized conduction and switching characteristics.
- Designed for high-voltage applications with a 1.2 kV blocking capability.
Applications
- High-frequency motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'DQ1G' against official Microchip documentation to confirm RoHS compliance and lead-free status. Ensure the TO-247-3 pinout matches the target PCB layout. Confirm that the 1.2 kV rating aligns with the system's peak voltage requirements. Check for any recent Product Change Notifications affecting the component specifications.
Selection Notes
Select this component when a single IGBT with an integrated fast-recovery SiC diode is required. The 69 A continuous current rating suits moderate power levels. Consider the 3.3 V saturation voltage for thermal management calculations. The TO-247-3 package facilitates efficient heat sinking compared to smaller form factors.
Part Context
This part belongs to Microchip's POWER MOS 7 IGBT series, which combines trench gate MOS technology with field-stop structures. The 'Combi' designation indicates the inclusion of a complementary diode, typically a SiC Schottky, to reduce reverse recovery losses. This series targets efficiency improvements in hard-switching applications.
Replacement Considerations
Direct replacements must match the 1.2 kV voltage rating, TO-247-3 package, and integrated SiC diode configuration. Verify that alternative parts offer comparable saturation voltage and switching speeds. Ensure thermal resistance values are suitable for the existing heatsink design.
FAQ
What type of diode is integrated with the IGBT?
The APT25GP120BDQ1G integrates a Silicon Carbide (SiC) diode, as indicated by the 'Combi' description in its specifications.
What is the maximum operating junction temperature?
The maximum operating temperature is specified as +150°C.
Is this device available in a surface-mount package?
No, the APT25GP120BDQ1G is designed for through-hole installation in a TO-247-3 package.
