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Product Detailed Parameters
- Description：IGBT NPT 1200V 75A TO-247
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：521 W
- Switching Energy：434µJ (on), 466µJ (off)
- Input Type：Standard
- Gate Charge：203 nC
- Td (on/off) @ 25°C：16ns/122ns
- Test Condition：600V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The APT25GR120BSCD10 is a Combi Ultra Fast NPT-IGBT featuring an integrated zero recovery low leakage SiC anti-parallel diode in a TO-247 package. It provides a collector-emitter voltage of 1200V and a continuous collector current of 75A at 25°C case temperature. The IGBT exhibits a typical on-state voltage of 2.5V at 25A, while the SiC diode offers a forward voltage of 1.5V at 10A. Total power dissipation reaches 521W at 25°C, with a junction temperature range spanning -55°C to 150°C.
Feature Summary
- Ultra Fast Non-Punch-Through (NPT) technology for superior ruggedness and high-frequency switching capabilities
- Integrated Silicon Carbide (SiC) anti-parallel diode providing zero reverse recovery charge and ultra-low leakage current
- Rated for short circuit withstand conditions under specified test parameters
Applications
- Induction heating systems
- Motor control drives
- General purpose inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's official datasheet specifications against the physical markings on the device. Confirm that the ordering suffix matches the exact pinout and thermal characteristics required for your specific application design. Ensure proper electrostatic discharge handling procedures are followed during storage and installation.
Selection Notes
Select this component when high switching frequency and low tail current are critical requirements. The integrated SiC diode eliminates reverse recovery losses associated with standard silicon freewheeling diodes. Evaluate thermal management needs based on the 521W power dissipation rating and ensure the gate drive voltage aligns with the specified 15V operating condition for optimal performance.
Part Context
This discrete power module belongs to Microsemi's Ultra Fast NPT-IGBT family, designed for high-voltage industrial applications. The 'Combi' designation indicates the integration of the IGBT switch and the SiC diode within a single package. This configuration reduces parasitic inductance and simplifies layout compared to discrete dual-component solutions.
Replacement Considerations
Direct replacements must match the 1200V rating, TO-247 package, and integrated SiC diode topology. Verify that alternative components support similar short circuit withstand times and switching energy losses to maintain system reliability without redesigning the gate drive or thermal interface.
