APT25GR120SSCD10

Description：IGBT NPT 1200V 75A D3PAK
Series：-

SKU:03a9b31eb1b5 Category: Single IGBTs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 75A D3PAK
Series：-
Mfr：Microsemi Corporation
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
Power - Max：521 W
Switching Energy：434µJ (on), 466µJ (off)
Input Type：Standard
Gate Charge：203 nC
Td (on/off) @ 25°C：16ns/122ns
Test Condition：600V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：D3PAK
Grade：-
Qualification：-

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APT25GR120SSCD10

Overview

The APT25GR120SSCD10 is a Combi module integrating an Ultra Fast NPT-IGBT and a Zero Recovery Low Leakage SiC Anti-Parallel Diode. The IGBT offers a collector-emitter voltage of 1200V, with continuous collector currents of 75A at 25°C case temperature and 25A at 125°C. It features a typical on-state voltage of 2.5V at 25A and supports a short circuit withstand time of 10μs. The integrated SiC diode provides a maximum DC forward current of 36A at 25°C and exhibits zero reverse recovery charge. Total power dissipation reaches 521W for the IGBT at 25°C.

Feature Summary

Ultra Fast Non-Punch-Through (NPT) technology providing superior ruggedness and high-frequency switching capabilities.
Integrated Silicon Carbide (SiC) anti-parallel diode featuring zero reverse recovery charge and ultra-low leakage current.
Short circuit withstand rated capability allowing operation under fault conditions for specified durations.
RoHS compliant construction suitable for environmentally conscious manufacturing processes.

Applications

Induction heating systems
Motor control drives
General purpose inverters
Uninterruptible power supplies

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches TO-247 or D3PAK requirements. Ensure handling procedures account for electrostatic discharge sensitivity during installation and storage to prevent device degradation.

Selection Notes

Select this component for applications requiring fast switching speeds and low tail current characteristics. Evaluate thermal management needs based on the junction-to-case thermal resistance values provided in the datasheet. Consider the short circuit rating when designing protection circuits for inductive loads.

Part Context

This part belongs to the Microsemi Ultra Fast NPT-IGBT family, combining discrete IGBT performance with SiC diode benefits in a single module. It represents a generation of high-voltage power devices designed for efficiency and reliability in demanding power electronics environments.

Replacement Considerations

Direct substitutes include other models within the APT25GR120xSCD10 series, such as the APT25GR120BSCD10. Verify electrical parameters and pinout compatibility before substitution to ensure system integrity.

FAQ

What is the short circuit withstand time for the IGBT?

The IGBT is rated for a short circuit withstand time of 10 microseconds under conditions of VCE = 600V, VGE = 15V, and TC = 125°C.

Does the integrated diode exhibit reverse recovery charge?

No, the integrated anti-parallel diode is a Zero Recovery Low Leakage SiC Diode with a total capacitive charge of 30nC but effectively zero reverse recovery charge.