APT26M100JCU2

Single FETs, MOSFETs Overview

The APT26M100JCU2 is a discrete semiconductor module manufactured by Microchip Technology, utilizing Silicon technology. It features an N-Channel Power MOSFET integrated with a SiC Diode in a single configuration. The device is housed in a SOT-227 package with screw mounting capabilities. Key electrical parameters include a drain-to-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 20 A. The typical on-resistance (Rds(on)) is 330 mΩ, with a maximum gate-source voltage of ±30 V. The module supports a power dissipation of 543 W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Integrates an N-Channel MOSFET with a Silicon Carbide (SiC) diode for efficient switching applications.
• Designed for high-voltage operation with a 1000 V breakdown rating.
• Utilizes a robust SOT-227 package suitable for screw mounting and thermal management.

Single FETs, MOSFETs Applications

• Boost chopper circuits
• Industrial motor drives
• High-frequency power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CU2' against official Microchip documentation to confirm pinout and mechanical dimensions, as variations exist within the POWER MOS 8 series. Ensure compatibility with existing heatsinking solutions given the 543 W power dissipation rating. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a combined MOSFET and fast-recovery diode solution is required in a single package. The 1000 V rating suits medium-voltage industrial applications. Compare the 330 mΩ on-resistance against alternative modules to ensure thermal performance meets system constraints. Verify that the SOT-227 footprint matches the PCB design requirements.

Single FETs, MOSFETs Part Context

This module belongs to the POWER MOS 8 series from Microchip Technology, formerly Microsemi. The series is characterized by high-performance silicon carbide integration. The APT26M100JCU2 represents a specific variant within this lineup, distinguished by its 20 A current rating and 1000 V voltage class, targeting compact high-power designs.

Single FETs, MOSFETs Replacement Considerations

The APT21M100J is a related module in the same series but offers a lower current rating of 21 A and different on-resistance characteristics. Verify if the lower current capacity or different Rds(on) affects the thermal design. No other direct substitutes are confirmed in the provided data.