APT29F100B2

Single FETs, MOSFETs Overview

The APT29F100B2 is a single N-Channel FREDFET MOS 8 power transistor manufactured by Microchip Technology. It utilizes Silicon technology and is housed in a TO-247 MAX (3+Tab) through-hole package. Key electrical specifications include a drain-source voltage of 1 kV, a continuous drain current of 30 A at case temperature, and a maximum on-state resistance of 440 milliohms. The device supports a power dissipation of 1040 W at case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes MOS 8 technology for optimized switching performance
• Designed as a Fast Recovery Freewheeling Diode (FREDFET)
• Capable of high power dissipation up to 1040 W

Single FETs, MOSFETs Applications

• High-voltage switching circuits
• Industrial motor control systems
• Power supply topologies requiring fast recovery characteristics

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes with Microchip Technology or authorized distributors before procurement. Confirm that the TO-247 MAX package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 1040 W power dissipation rating under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-Channel MOSFET with integrated fast recovery diode functionality is required. The 1 kV rating suits applications exceeding standard low-voltage limits. Consider the 440 milliohm on-resistance for conduction loss calculations. The TO-247 MAX package offers robust mechanical stability for high-power industrial environments.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip POWER MOS 8 series, which integrates MOSFET and diode technologies. The APT29F100B2 specifically targets high-voltage applications where fast recovery characteristics are critical. It serves as a discrete solution for power conversion stages requiring high reliability and efficient switching.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1 kV voltage rating, N-Channel configuration, and TO-247 MAX package. Verify equivalent on-resistance and reverse recovery times. Cross-reference with other APT series parts from Microchip or comparable offerings from other manufacturers ensuring identical pinout and thermal characteristics.