APT30GP60BDQ1G

Overview

The APT30GP60BDQ1G is a single N-channel Insulated Gate Bipolar Transistor manufactured by Microchip Technology using silicon technology. It features a maximum collector-emitter voltage of 900 V and a continuous collector current of 25 A at 25°C. The device exhibits a collector-emitter saturation voltage of 3.2 V and a power dissipation rating of 140 W. It operates within a temperature range from -55°C to +150°C and utilizes a TO-247 package for through-hole mounting.

Feature Summary

• High-voltage capability with 900 V blocking
• Robust thermal performance up to 150°C junction temperature
• Through-hole mounting for secure mechanical attachment

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix DQ1G against official Microchip documentation to confirm compliance with RoHS directives and lead-free status. Confirm that the TO-247 package dimensions match your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a 900 V rating is required for high-voltage switching applications. Ensure the thermal management system can handle the 140 W power dissipation limit. Verify that the 25 A current rating meets the peak load demands of the target circuit design.

Part Context

This part belongs to the APT series of discrete IGBTs from Microchip Technology, formerly known as Advanced Power Technology. The series focuses on medium-power switching applications requiring reliable high-voltage performance in industrial environments.

Replacement Considerations

Check Microchip's official cross-reference lists for direct replacements. Consider parts with identical 900 V ratings and TO-247 packages if pin compatibility is critical.