APT30GP60BG

Overview

The APT30GP60BG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Power MOS 7 technology and features a Planar Trench Field-Stop (PT) structure. The device is housed in a TO-247 package with through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 100 A at 25°C. The saturation voltage (VCE(sat)) is specified at 2.2 V, with a power dissipation rating of 463 W. The operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Power MOS 7 technology for optimized switching performance
• Planar Trench Field-Stop structure for low conduction loss
• Single configuration suitable for high-power applications

Applications

• Motor drives and inverters
• Switched-mode power supplies
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and tape-and-reel options. Confirm RoHS compliance status via the manufacturer's datasheet or environmental declaration before procurement. Cross-reference the Mouser part number 494-APT30GP60BG with the original manufacturer's catalog to validate authenticity and current production status.

Selection Notes

Select this component for designs requiring a 600 V rated IGBT with a 100 A continuous current capability in a TO-247 package. Ensure the thermal management system can handle the 463 W power dissipation rating. Verify that the gate drive circuitry supports the required voltage levels within the specified operating temperature range of -55°C to +150°C.

Part Context

This part belongs to the APT series of IGBTs from Microchip Technology, which are designed for general-purpose power switching applications. The TO-247 package provides robust mechanical stability and efficient heat dissipation capabilities compared to smaller surface-mount alternatives.