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The APT35GN120L2DQ2G is a single NPT Trench Field Stop IGBT manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 1200V and supports a continuous collector current of 94A at 25°C. The device has a maximum power dissipation of 379W and operates within a temperature range starting from -55°C. It utilizes a TO-264AA package with three terminals. The gate-emitter leakage current is specified at 600 nA, with a maximum gate-emitter voltage rating of ±30 V.
Verify the specific suffix DQ2G against official Microchip documentation to confirm exact binning or tape-and-reel specifications. Ensure thermal management solutions align with the 379W power dissipation rating. Confirm that the TO-264AA package dimensions match the target PCB layout requirements before finalizing procurement orders.
Select this component for designs requiring 1200V blocking capability and high current handling up to 94A. Consider the Trench Field Stop architecture for improved switching efficiency compared to standard field-stop devices. Evaluate thermal resistance characteristics relative to the intended heat sink interface to ensure reliable operation under continuous load conditions.
This part belongs to Microchip's discrete power semiconductor portfolio, specifically within the IGBT category. It complements other high-voltage switching devices used in power conversion systems. The product line focuses on delivering reliability and performance for demanding industrial and automotive environments where robust switching elements are critical.
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters such as Vces and Ic when evaluating alternative parts.