SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT35GN120SG is a single NPT, Trench Field Stop IGBT manufactured by Microchip Technology. It features a TO-268-3 (D3PAK) surface mount package with two leads and a tab. The device supports a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 94 A, with a pulsed current rating of 105 A. The maximum power dissipation is 379 W. Key electrical parameters include a maximum Vce(on) of 2.1 V at 15 V gate drive and 35 A collector current, an input charge of 220 nC, and switching times of 24 ns turn-on and 300 ns turn-off at 25°C under test conditions of 800 V, 35 A, and 2.2 ohm source resistance. Operating junction temperature ranges from -55°C to 150°C.
Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm that the received part matches the specific APT35GN120SG designation and package variant. Review official datasheets for handling precautions related to the TO-268 form factor and thermal management requirements during installation.
Select this component when a surface mount IGBT with 1200 V blocking capability is required. The D3PAK package suits automated assembly processes. Ensure the application demands align with the 35 A nominal current rating and the specific switching characteristics defined in the official documentation.
This part belongs to the Microchip APT series of discrete Insulated Gate Bipolar Transistors. It represents a field-stop technology implementation designed for robust operation in medium-power electronic switching environments. The series provides standardized pinouts and thermal profiles for consistent design integration across various industrial power electronics platforms.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip Technology resources for cross-reference data before considering alternative components.