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Product Detailed Parameters
- Description：IGBT PT 1200V 96A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：96 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 35A
- Power - Max：543 W
- Switching Energy：750µJ (on), 680µJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：16ns/94ns
- Test Condition：600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT35GP120BG is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and is housed in a TO-247-3 through-hole package. The device features a collector-emitter maximum voltage (VCEO) of 1.2 kV and a collector-emitter saturation voltage of 3.3 V. It supports a continuous collector current of 96 A at 25°C, with a power dissipation rating of 543 W. The gate-emitter maximum voltage range is -20 V to +20 V. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Single IGBT configuration for discrete switching applications
- High voltage capability suitable for medium-power conversion
- Through-hole mounting for robust mechanical connection
Applications
- Motor drive inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against the official Microchip datasheet to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides authentic components with traceable documentation. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity before purchase.
Selection Notes
Select this component when a single-switch topology requires 1200 V blocking capability and high current handling. Evaluate the thermal management requirements based on the 543 W power dissipation rating and the TO-247-3 package thermal resistance. Confirm that the gate drive voltage limits align with the -20 V to +20 V specification for reliable operation.
Part Context
This component belongs to the Microchip PowerTrench IGBT family, designed for general-purpose power switching. It serves as a discrete alternative to integrated modules in applications where space allows for individual component placement. The TO-247-3 package offers a balance between thermal performance and ease of integration into standard PCB layouts.
Replacement Considerations
Direct replacements must match the 1200 V rating, similar current capacity, and TO-247-3 footprint. Verify that any substitute maintains comparable saturation voltage and switching characteristics to ensure circuit performance consistency.
