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Product Detailed Parameters
- Description：IGBT PT 600V 65A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Current - Collector Pulsed (Icm)：109 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：307µJ (on), 254µJ (off)
- Input Type：Standard
- Gate Charge：102 nC
- Td (on/off) @ 25°C：16ns/122ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT36GA60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes PT MOS 8 Combi technology and is housed in a TO-247 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 36 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2 V, a gate-emitter voltage range of -30 V to +30 V, and a power dissipation rating of 290 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates PT MOS 8 Combi technology for optimized switching performance.
- Designed for high-voltage applications with a 600 V blocking capability.
- Utilizes a robust TO-247 through-hole package for effective thermal management.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency inverters
Procurement Notes
Verify the specific suffix 'D15' when sourcing, as the base model APT36GA60B may refer to a standard configuration while the full part number indicates specific packaging or revision details. Confirm RoHS compliance status directly from the manufacturer's latest documentation before procurement. Check for end-of-life status or alternative recommendations if current stock is limited.
Selection Notes
Select this component for circuits requiring a 600 V rated IGBT with moderate current handling capabilities. Ensure the gate driver can supply the required voltage levels within the specified -30 V to +30 V range. Verify that the thermal design accommodates the 290 W power dissipation rating under worst-case operating conditions.
Part Context
This component belongs to Microchip's APT series of discrete IGBTs, which are designed for general-purpose power switching applications. The series offers a balance of low conduction losses and fast switching speeds, suitable for various industrial and consumer power electronics designs.
Replacement Considerations
Direct substitutes should be sought from the same APT series or comparable 600 V, ~36 A IGBTs in TO-247 packages. Verify pinout compatibility and ensure equivalent electrical characteristics such as Vce(sat) and switching times.
