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APT38M50J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 38A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT38M50J
- Description：MOSFET N-CH 500V 38A ISOTOP
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：220 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT38M50J
Single FETs, MOSFETs Overview
The APT38M50J is a single N-channel Power MOSFET module manufactured by Microchip Technology. It utilizes silicon technology and features an ISOTOP package design within the SOT-227-4 form factor, intended for screw mount installation. The device supports a drain-source voltage of 500 V and a continuous drain current of 38 A at case temperature. It operates within a junction temperature range of -55°C to +150°C with a maximum gate-source voltage of ±30 V.
Single FETs, MOSFETs Feature Summary
- ISOTOP base-mounted construction for efficient thermal management
- Single N-channel configuration for discrete power switching
- High voltage capability suitable for industrial applications
Single FETs, MOSFETs Applications
- Industrial motor drives
- Power supply inverters
- Welding equipment
Single FETs, MOSFETs Procurement Notes
Verify the specific revision level and RoHS compliance status directly through official Microchip documentation before procurement. Confirm that the SOT-227-4 mounting hole dimensions match the target heatsink interface. Ensure static handling precautions are observed during assembly due to the sensitivity of the gate oxide layer in power MOSFET structures.
Single FETs, MOSFETs Selection Notes
Select this component when a robust, high-voltage discrete switch is required in a screw-mountable package. The 500 V rating provides adequate headroom for standard industrial bus voltages. Consider the thermal resistance characteristics inherent to the ISOTOP design for effective heat dissipation without requiring complex mounting hardware.
Single FETs, MOSFETs Part Context
This part belongs to the POWER MOS 8 series from Microchip Technology, which focuses on high-performance silicon power switches. The series is designed to replace older generations of power transistors with improved ruggedness and switching characteristics. It serves as a fundamental building block for medium-power electronic conversion systems.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other members of the APT58M50 or APT100M50 families if higher current ratings are needed, provided the pinout and mechanical footprint remain compatible.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
