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Product Detailed Parameters
- Description：IGBT PT 600V 100A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 40A
- Power - Max：543 W
- Switching Energy：385µJ (on), 352µJ (off)
- Input Type：Standard
- Gate Charge：135 nC
- Td (on/off) @ 25°C：20ns/64ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT40GP60BG is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon PT MOS 7 technology and is housed in a TO-247 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a power dissipation rating of 543 W, and a gate-emitter voltage range of -30 V to +30 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single configuration IGBT utilizing PT MOS 7 silicon technology for robust switching performance.
- TO-247 through-hole package design facilitating standard mounting and thermal management.
- High thermal stability with an extended operating junction temperature range up to +150°C.
Applications
- Industrial motor drives and control systems
- Switch-mode power supplies (SMPS)
- Inverter circuits for renewable energy applications
Procurement Notes
Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation prior to procurement. Ensure that the component meets all required RoHS compliance standards for the intended market. Cross-reference the datasheet revision history to confirm that no product change notifications affect the pinout or electrical characteristics of the APT40GP60BG before finalizing supply chain agreements.
Selection Notes
Select this component when a 600 V rated single IGBT with high current capability is required. The 100 A continuous current rating and 543 W power dissipation make it suitable for medium-power switching applications. Consider the TO-247 package constraints for PCB layout and heatsinking requirements compared to surface-mount alternatives.
Part Context
This part belongs to the Microchip APT series of discrete power semiconductors. It serves as a standalone switching element distinct from integrated modules like the APT40GP60J. The TO-247 form factor provides a balance between current handling capacity and ease of integration into traditional through-hole assembly processes.
Replacement Considerations
Direct substitutes must match the 600 V / 100 A specification and TO-247 package. Verify compatibility with existing gate drive voltages, specifically the +/- 30 V limit, when considering alternative brands.
