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The APT40GP90JDQ2 is a single IGBT module from Microchip Technology's POWER MOS 7 series, utilizing PT technology. It features a 900 V collector-emitter breakdown voltage and a maximum continuous collector current of 64 A. The device dissipates up to 284 W of power with a saturation voltage of 3.9 V at 15 V gate drive and 40 A collector current. Input capacitance is 3.3 nF at 25 V. It operates within a junction temperature range of -55°C to 150°C and uses the ISOTOP package for chassis mounting.
Verify the specific suffix JDQ2 against official datasheets to confirm exact electrical tolerances and packaging details. Check for recent Product Change Notifications regarding assembly origin or labeling updates. Ensure compatibility with existing thermal management solutions for the ISOTOP form factor before procurement.
Select this component when a 900 V rating is required for high-voltage applications. Compare the 64 A current capability and 3.9 V saturation voltage against system requirements. Consider the ISOTOP package constraints for board layout and heatsinking integration compared to standard discrete packages.
This part belongs to the APT40GP90 base product line. Variants such as APT40GP90J share similar core specifications but may differ in packaging or minor electrical characteristics. The JDQ2 suffix denotes specific manufacturing and packaging attributes within the broader family.
APT40GP90J is a related variant within the same base product line. Verify if the packaging differences between ISOTOP and other forms affect mechanical integration. Cross-reference datasheets for exact parameter matching before substitution.