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The APT40GR120B is a single Ultra Fast NPT-IGBT manufactured by Microchip Technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 88 A at 25°C case temperature, with a typical saturation voltage of 2.5 V. The device supports a pulsed collector current of 160 A and has a total power dissipation rating of 500 W at 25°C. Operating junction temperatures range from -55°C to 150°C. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.25 °C/W.
Verify the specific manufacturer designation, as historical documentation references Microsemi. Confirm the component matches the TO-247 outline dimensions and pinout configuration provided in the datasheet. Ensure the ordering suffix corresponds to the standard lead plating specifications. Cross-reference the part number against current Microchip Technology product portfolios to confirm availability status.
Select this component for applications requiring high-voltage blocking and fast switching speeds. Evaluate the thermal management requirements based on the 0.25 °C/W junction-to-case resistance. Consider the short circuit withstand time when designing protection circuits. Verify that the gate drive voltage aligns with the specified 15 V operating condition for optimal performance.
This IGBT belongs to the Ultra Fast NPT series designed for high-power switching applications. It represents a discrete single-chip solution within the broader portfolio of power semiconductors offered by the manufacturer. The technology focuses on reducing switching losses while maintaining robust operation under fault conditions.
APT30DQ120