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The APT43GA90B is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and features a Through-Hole TO-247-3 package. The device has a maximum collector-emitter voltage of 900 V and a continuous collector current of 78 A at 25°C. Maximum power dissipation is rated at 337 W, with an operating temperature range from -55°C to +150°C.
Verify the specific suffix against official Microchip documentation to confirm exact electrical characteristics and packaging details. Distributor listings may contain conflicting technical data or incorrect model identifiers. Confirm RoHS compliance status directly through the manufacturer's datasheet before procurement.
Select this component for high-voltage applications requiring 900 V blocking capability. Ensure thermal management supports the 337 W dissipation rating within the specified temperature limits. Compare the 78 A continuous current rating against peak load requirements to prevent overstress during operation.
This part belongs to the APT series of IGBTs from Microchip Technology. It shares the TO-247-3 form factor with other devices in the lineup but differs in voltage and current ratings. The 'GA' designation typically indicates specific silicon technology variants within the product family.
Cross-reference with APT43GA90BD30 for similar specifications. Verify pinout compatibility and thermal resistance values when substituting with other 900 V, TO-247-3 IGBTs from different manufacturers.