APT44GA60B

$5.85

Description：IGBT PT 600V 78A TO247
Series：POWER MOS 8™

SKU:7aa46be996c5 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 78A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：78 A
Current - Collector Pulsed (Icm)：130 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 26A
Power - Max：337 W
Switching Energy：409µJ (on), 258µJ (off)
Input Type：Standard
Gate Charge：128 nC
Td (on/off) @ 25°C：16ns/84ns
Test Condition：400V, 26A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT44GA60B

Overview

The APT44GA60B is a single Insulated Gate Bipolar Transistor (IGBT) from Microchip Technology's POWER MOS 8 series. It utilizes Planar Trench Field Stop (PT) technology with silicon construction. The device features a collector-emitter voltage of 600 V and a continuous collector current of 78 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±30 V, a collector-emitter saturation voltage of 2 V, and a power dissipation rating of 337 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Incorporates Planar Trench Field Stop technology for optimized switching performance.
Features a robust TO-247-3 package designed for through-hole mounting applications.

Applications

Industrial motor drives
Power supply inverters
Welding equipment

Procurement Notes

Verify the specific suffix against the official datasheet to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid traceability documentation. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and compliance with RoHS standards before finalizing orders.

Selection Notes

Select this component when a 600V IGBT with high current handling capability is required. Consider the 2 V saturation voltage for efficiency needs. Evaluate the thermal management requirements based on the 337 W dissipation rating. Confirm that the TO-247-3 package fits the target PCB layout constraints.

Part Context

This device belongs to the POWER MOS 8 family, which represents an evolution in IGBT technology focusing on improved switching speeds and reduced losses. It serves as a discrete power switch alternative to integrated modules in medium-power applications.

Replacement Considerations

Check for direct substitutes within the same series such as APT54GA60B or APT68GA60B for higher current ratings. Verify compatibility with existing gate drive circuits when considering alternatives.