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The APT45GR65BSCD10 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microsemi Corporation. It features an NPT (Non-Punch-Through) structure and is housed in a TO-247-3 package. The device has a maximum collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 118 A. It supports pulsed collector currents exceeding the continuous limit, with a maximum power dissipation of 543 W.
This component is officially listed as Obsolete by the manufacturer. Verify availability through authorized distributors or secondary market channels. Confirm that the part number matches the exact specification required for legacy system maintenance or replacement projects.
Select this component for applications requiring a 650V rated IGBT with integrated freewheeling capability. Ensure the thermal management solution supports the 543 W power dissipation rating within the TO-247-3 package constraints for reliable operation.
The APT45GR65BSCD10 belongs to the Microsemi IGBT-Schottky Diode Combination series. It was discontinued on October 16, 2017, according to product discontinuance notices. It serves as a high-power switching element in medium-voltage industrial electronics.
APT45GR65SSCD10 is a confirmed substitute part number from the same manufacturer series.