APT46GA90JSC30

Description：IGBT PT MOS 8 COMBI 900 V 46 A S
Series：-

SKU:78ce7d2a45d8 Category: Single IGBTs Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT PT MOS 8 COMBI 900 V 46 A S
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

APT46GA90JSC30

Overview

The APT46GA90JSC30 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Punch-Through (PT) technology and features a SOT-227-4 package with screw mount installation. The device has a maximum collector-emitter voltage of 900 V and a continuous collector current of 87 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of 30 V, a power dissipation of 284 W, and a minimum operating temperature of -55°C.

Feature Summary

Single IGBT configuration utilizing punch-through technology for robust performance
SOT-227-4 package design supporting screw mount installation
High thermal durability suitable for demanding industrial environments

Applications

Industrial motor drives
Power conversion systems
Inverter circuits

Procurement Notes

Verify the specific suffix JSC30 against official Microchip documentation to confirm exact pinout and electrical characteristics. Ensure the procurement channel provides valid traceability for this discrete component. Confirm that the SOT-227-4 package matches the mechanical constraints of the target application before finalizing orders.

Selection Notes

Select this component when a 900V rating and 87A continuous current capability are required in a screw-mountable package. Consider the 284W power dissipation limit and -55°C to +150°C operating range for thermal management planning. Verify compatibility with standard gate drive voltages within the 30V maximum specification.

Part Context

This part belongs to the Microchip IGBT portfolio, specifically designed for high-power applications. It represents a discrete solution distinct from module configurations like the APT46GA90JD40. The product line focuses on providing reliable switching performance for industrial and energy conversion markets.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other 900V PT IGBTs in the SOT-227-4 package only after verifying all electrical and thermal parameters against the original datasheet.