APT50GF120B2RG

$18.08

Description：IGBT NPT 1200V 135A
Series：-

SKU:d3c019f40576 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 135A
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：135 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 50A
Power - Max：781 W
Switching Energy：3.6mJ (on), 2.64mJ (off)
Input Type：Standard
Gate Charge：340 nC
Td (on/off) @ 25°C：25ns/260ns
Test Condition：800V, 50A, 1Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：-
Grade：-
Qualification：-

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APT50GF120B2RG

Overview

The APT50GF120B2RG is a single NPT IGBT transistor manufactured by Microchip Technology. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current of 135 A at 25°C, with a pulsed current rating of 150 A. The device is housed in a TO-247MAX package suitable for through-hole mounting. Key electrical parameters include a gate-emitter leakage current of 100 nA and a maximum power dissipation of 781 W. The operational temperature range spans from -55°C to +150°C, ensuring reliability in demanding thermal environments.

Feature Summary

Utilizes NPT technology for robust high-voltage performance
Designed for through-hole installation in industrial applications
Supports high continuous and pulsed current capabilities

Applications

Industrial automation systems
Embedded power control circuits
High-frequency switching applications

Procurement Notes

Verify component authenticity using official Microchip Technology documentation and datasheets. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compatibility with existing thermal management solutions due to the specified power dissipation ratings. Cross-reference part numbers to avoid substitution errors during procurement processes.

Selection Notes

Select this component when a 1200 V rated single IGBT with high current capacity is required. The TO-247MAX package facilitates efficient heat dissipation for through-hole designs. Consider the 135 A continuous current rating against load requirements. Evaluate the -55°C to +150°C operating range for environmental suitability.

Part Context

This IGBT belongs to the Microchip Technology discrete transistor portfolio, specifically designed for power switching applications. It represents a standard solution for medium-to-high power electronics, offering a balance of voltage blocking capability and current handling within a widely used through-hole form factor.