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Product Detailed Parameters
- Description：IGBT NPT COMBI 1200V 50A ISOTOP
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227 (ISOTOP®)
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：460 W
- Current - Collector Cutoff (Max)：750 µA
- Input Capacitance (Cies) @ Vce：3.45 nF @ 25 V
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Overview
The APT50GF120JRD is a single NPT Low Frequency Combi IGBT module manufactured by Microchip Technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 75 A at 25°C. The device operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 460 W. It utilizes a SOT-227-4 package with screw mount installation style. Key electrical limits include a gate-emitter leakage current of 100 nA and a maximum gate-emitter voltage of 20 V.
Feature Summary
- NPT Low Frequency Combi technology for robust switching performance
- Single configuration in a compact SOT-227-4 package
- High thermal stability with operation up to +150°C
Applications
- Low frequency power conversion systems
- Industrial motor drives
- Inverter applications requiring high voltage isolation
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SOT-227-4 package dimensions match the target PCB footprint and thermal management design requirements. Ensure the screw mount interface aligns with the assembly hardware specifications.
Selection Notes
Select this component when a single IGBT switch with 1.2 kV blocking capability and 75 A continuous current is required. The NPT technology suits low-frequency applications where ruggedness is prioritized. Verify that the 460 W power dissipation rating meets the thermal design constraints of the intended heat sink and cooling environment.
Part Context
This part belongs to the Microchip APT series of discrete IGBT modules. It shares the SOT-227-4 form factor with other variants like the APT60GF120JRD but offers different current ratings. The 'JRD' suffix typically denotes specific internal die configurations or packaging variations within the NPT Low Frequency Combi family.
Replacement Considerations
Direct replacements must match the 1.2 kV, 75 A, SOT-227-4 specification. Consider the APT60GF120JRD for higher current capacity in the same package. Cross-check pinout compatibility and thermal resistance values when substituting with other manufacturers' NPT IGBT modules.
