APT50GN120L2DQ2G

$15.25

Description：IGBT NPT FIELD STOP 1200V 134A
Series：-

SKU:2881b4b01edc Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT NPT FIELD STOP 1200V 134A
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：134 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：543 W
Switching Energy：4495µJ (off)
Input Type：Standard
Gate Charge：315 nC
Td (on/off) @ 25°C：28ns/320ns
Test Condition：800V, 50A, 2.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：-
Grade：-
Qualification：-

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APT50GN120L2DQ2G

Overview

The APT50GN120L2DQ2G is a single N-channel IGBT from Microchip Technology, housed in a TO-264 MAX package. It features a Fieldstop technology with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 66 A at 25°C. The device supports a pulsed collector current of 134 A to 150 A and dissipates up to 543 W of power. Operating temperatures range from -55°C to +150°C, with a gate-emitter voltage limit of ±30 V.

Feature Summary

Fieldstop technology for optimized switching performance
High thermal stability with wide operating temperature range
Robust packaging for high-power industrial applications

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Inverter systems

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-264 MAX package dimensions and mounting requirements align with the target PCB or heatsink design. Ensure thermal management solutions support the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component for applications requiring high voltage blocking capability and moderate current handling within a robust through-hole package. Consider the trade-off between conduction losses and switching speeds inherent to Fieldstop IGBTs compared to standard NPT designs. Evaluate thermal resistance parameters to ensure adequate heat sinking for sustained operation at rated currents.

Part Context

This part belongs to Microchip's discrete IGBT portfolio, designed for medium to high-power conversion tasks. It complements other devices in the series by offering a balance of efficiency and ruggedness suitable for demanding industrial environments where reliability and thermal performance are critical.

Replacement Considerations

Direct substitutes may include other 1200V, 50A-class IGBTs in TO-264 packages from Microchip or competitors, provided pinout compatibility and thermal characteristics match. Verify equivalent switching times and saturation voltages to maintain system performance.