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The APT50GR120B2 is a single N-channel IGBT from Microchip Technology, utilizing Silicon technology and housed in a TO-247-3 package for through-hole mounting. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 85 A at 25°C. The device has a power dissipation rating of 962 W, with a collector-emitter saturation voltage of 3.5 V. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific ordering suffix B2 against official Microchip documentation to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status via the manufacturer datasheet before procurement. Ensure component authenticity by sourcing from authorized distributors only.
Select this component when a 1200 V rated single IGBT with 85 A continuous current capacity is required. Consider the 3.5 V saturation voltage for conduction loss calculations. Verify that the TO-247-3 package fits the PCB layout and thermal management strategy. Check gate drive compatibility with the specified voltage limits.
This part belongs to the APT series of discrete IGBTs manufactured by Microchip Technology. It is designed for general-purpose high-power switching applications requiring robust performance and reliability. The TO-247-3 package provides a balance between current handling capability and ease of mounting on heatsinks.
Consult Microchip's official cross-reference tools or datasheets for verified equivalent parts. Do not assume functional interchangeability with other 1200 V IGBTs without verifying pinouts, saturation voltages, and thermal resistance values.