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The APT50GT60BRG is a Thunderbolt series NPT IGBT from Microchip Technology, housed in a TO-247 [B] through-hole package. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 110 A, with a pulsed current rating of 150 A. The device has a maximum power dissipation of 446 W and a typical on-state voltage of 2.5 V at 50 A. Switching energies are 995 µJ (turn-on) and 1070 µJ (turn-off) under test conditions of 400 V, 50 A, 4.3 Ω, and 15 V. Gate charge is 240 nC, with turn-on/turn-off delays of 14 ns/240 ns. Operating junction temperature ranges from -55°C to 150°C.
Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and variant specifications. Confirm that the TO-247 [B] package dimensions match your PCB footprint requirements. Cross-reference the datasheet revision date to ensure compatibility with your design parameters. Ensure thermal management solutions align with the 446 W dissipation rating.
Select this component when a 600 V rated IGBT with 110 A continuous current capability is required in a standard through-hole package. Consider the NPT structure for applications demanding reliable blocking voltage characteristics. Evaluate the switching energy values against your system's thermal constraints and switching frequency requirements to ensure efficient operation.
This part belongs to the Thunderbolt IGBT series by Microchip Technology, focusing on high-performance discrete power transistors. The APT50GT60BRG specifically targets applications needing reliable 600 V switching with moderate current handling in a TO-247 form factor, distinct from module-based or MOSFET alternatives in the same portfolio.
Consult Microchip's official obsolescence notices and cross-reference guides for direct replacements. Verify pinout compatibility and electrical parameter equivalence before substituting with other 600 V NPT IGBTs in TO-247 packages.