APT60GT60JRDQ3

Overview

The APT60GT60JRDQ3 is a single NPT IGBT module manufactured by Microchip Technology. It features a collector-emax voltage (VCEO) of 600 V and a continuous collector current of 105 A at 25°C. The device has a maximum power dissipation of 379 W and a typical saturation voltage of 2.5 V at 15 V gate drive and 60 A collector current. It utilizes a SOT-227-4 (miniBLOC) package with screw mount installation. Operating temperatures range from -55°C to +150°C, with a maximum gate-emitter voltage of ±30 V.

Feature Summary

• NPT technology for robust switching performance
• Screw mount miniBLOC packaging for thermal efficiency
• High current density design

Applications

• Motor drives
• Inverters
• Welding equipment

Procurement Notes

Verify the specific suffix Q3 against official Microchip documentation to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides valid traceability for the SOT-227-4 package. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing orders.

Selection Notes

Select this component for applications requiring 600 V blocking capability and high continuous current handling in a compact form factor. The miniBLOC package supports efficient heat sinking via screw mounting. Evaluate thermal resistance requirements against the 379 W dissipation limit to ensure adequate heatsink sizing for the target operating environment.

Part Context

This part belongs to Microchip's discrete IGBT module lineup, utilizing NPT (Non-Punch Through) wafer technology. It is designed for medium-power industrial applications where reliability and switching speed are critical. The miniBLOC form factor distinguishes it from larger planar modules while offering higher current capacity than standard TO packages.

Replacement Considerations

Check Microchip datasheets for direct replacements within the APT series. Verify that any substitute matches the 600 V rating, 105 A current, and SOT-227-4 mechanical dimensions.